VS-10TTS08PBF series www.vishay.com vishay semiconductors revision: 23-aug-11 1 document number: 94572 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thyristor high voltage, phase control scr, 10 a features ? designed and qualified according to jedec-jesd47 ? compliant to rohs directive 2002/95/ec applications ? typical applications are in input rectification and crow-bar (soft start) and these products are designed to be used with vishay hpp input diodes, switches and output rectifiers which are available in identical package outlines. description the VS-10TTS08PBF high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase cont rol applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. product summary package to-220ab diode variation single scr i t(av) 6.5 a v drm /v rrm 800 v v tm 1.15 v i gt 15 ma t j - 40 c to 125 c ( g ) 3 2 (a) 1 (k) to-220ab output current in typical applications applications single-phase br idge three-phase bridge units capacitive in put filter t a = 55 c, t j = 125 c, common heatsink of 1 c/w 13.5 17 a major ratings and characteristics parameter test conditions values units i t(av) sinusoidal waveform 6.5 a i t(rms) 10 v rrm /v drm 800 v i tsm 140 a v t 6.5 a, t j = 25 c 1.15 v dv/dt 150 v/s di/dt 100 a/s t j range - 40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm at 125 c ma VS-10TTS08PBF 800 800 1.0
VS-10TTS08PBF series www.vishay.com vishay semiconductors revision: 23-aug-11 2 document number: 94572 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current i t(av) t c = 112 c, 180 conduction half sine wave 6.5 a maximum rms on-state current i t(rms) 10 maximum peak, one-cycle, non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied, t j = 125 c 120 10 ms sine pulse, no voltage reapplied, t j = 125 c 140 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied, t j = 125 c 72 a 2 s 10 ms sine pulse, no voltage reapplied, t j = 125 c 100 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied, t j = 125 c 1000 a 2 ? s maximum on-state voltage drop v tm 6.5 a, t j = 25 c 1.15 v on-state slope resistance r t t j = 125 c 17.3 m ? threshold voltage v t(to) 0.85 v maximum reverse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.05 ma t j = 125 c 1.0 typical holding current i h anode supply = 6 v, resistive load, initial i t = 1 a 30 maximum latching current i l anode supply = 6 v, resistive load 50 maximum rate of rise of off-state voltage dv/dt t j = 25 c 150 v/s maximum rate of rise of tu rned-on current di/dt 100 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum average gate power p g(av) 2.0 maximum peak positive gate current +i gm 1.5 a maximum peak negative gate voltage -v gm 10 v maximum required dc gate current to trigger i gt anode supply = 6 v, resistive load, t j = - 65 c 20 ma anode supply = 6 v, resistive load, t j = 25 c 15 anode supply = 6 v, resistive load, t j = 125 c 10 maximum required dc gate voltage to trigger v gt anode supply = 6 v, resistive load, t j = - 65 c 1.2 v anode supply = 6 v, resistive load, t j = 25 c 1 anode supply = 6 v, resistive load, t j = 125 c 0.7 maximum dc gate voltage not to trigger v gd t j = 125 c, v drm = rated value 0.2 maximum dc gate current not to trigger i gd 0.1 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.8 s typical reverse recovery time t rr t j = 125 c 3 typical turn-off time t q 100
VS-10TTS08PBF series www.vishay.com vishay semiconductors revision: 23-aug-11 3 document number: 94572 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristic fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 125 c maximum thermal resistance, junction to case r thjc dc operation 1.5 c/w maximum thermal resistance, junction to ambient r thja 62 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ab 10tts08 105 110 115 120 125 01234567 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average on-state current (a) 10tts08 r (dc) = 1.5 k/ w thjc 105 110 115 120 125 024681012 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 10tts08 r (dc) = 1.5 k/ w thjc 0 1 2 3 4 5 6 7 8 01234567 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 10tts08 t = 1 2 5 c j 0 2 4 6 8 10 12 024681012 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) 10tts08 t = 125c j
VS-10TTS08PBF series www.vishay.com vishay semiconductors revision: 23-aug-11 4 document number: 94572 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non- repetitive surge curren t fig. 6 - maximum non- repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 60 70 80 90 100 110 120 130 110100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with rated v applied following surge. rrm pe a k ha lf s ine wave on-state current (a) init ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 10tts08 50 60 70 80 90 100 110 120 130 140 150 0.01 0.1 1 pe a k ha l f s ine wave on-sta t e current (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initia l t = 125c no voltage reapplied ra t e d v re a p p l i e d rrm j 10tts 08 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 t = 2 5 c j insta ntaneous on-state current (a) instantaneous on-state voltage (v) t = 1 2 5 c j 10tts08 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 sq ua re wa ve pulse dura tion (s) steady state value (dc operation) si n g l e pu l se d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 thjc transient thermal impedance z (c/w) 10tts08
VS-10TTS08PBF series www.vishay.com vishay semiconductors revision: 23-aug-11 5 document number: 94572 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table 2 - current rating 3 - circuit conguration: t = s ingle thyri s tor t = to-220ab s = converter grade 4 - package: 5 - type of s ilicon: 6 - voltage code x 100 = v rrm 7 - none = s tandard production pbf = lead (pb)-free and roh s compliant device code 6 2 4 3 5 7 10 t t s 08 p b f 1 v s - 1 - vishay semiconductors product links to related documents dimensions www.vishay.com/doc?95222 part marking information www.vishay.com/doc?95225
document number: 95222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ab outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0.005" ) per side. these dimensions are measured at the outermost extremes of th e plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimensions: inches (6) thermal pad contour optional within dimensions e, h1, d2 and e1 (7) dimensions e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to- 220, except a2 (maximum) and d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 6.86 8.89 0.270 0.350 6 a2 2.56 2.92 0.101 0.115 e2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 d 14.85 15.25 0.585 0.600 3 q 2.60 3.00 0.102 0.118 d1 8.38 9.02 0.330 0.355 ? 90 to 93 90 to 93 d2 11.68 12.88 0.460 0.507 6 13 2 d d1 h1 q 13 2 c c d d 3 x b2 3 x b (b, b2) b1, b3 (h1) d2 detail b c a b l e1 lead tip e e2 ? p 0.014 a b m m 0.015 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220ab (6) (6) (7) (6) (7) e 2 x l1 (2) detail b s ection c - c and d - d view a - a ba s e metal plating (4) (4) c1 c (6) thermal pad (e) e1 (6)
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